February 27, 2017—Frontier NanoSystems has been selected to present as one of the Top Innovators at the annual Venture Summit | West by youngStartup Ventures. View the full press release.
November 29, 2016—Frontier NanoSystems has been honored as a winner of a prestigious 2016 Red Herring Top 100 Global award. View the full press release.
June 26, 2016—Frontier NanoSystems has been named a winner of a 2016 Red Herring Top 100 North America award. View the full press release.
January 25, 2016—Klaus S. Viljanmaa is joining Frontier NanoSystems, LLC as its Senior Vice President, and will be responsible for managing Business Operations. Founder/General Manager, L. Pierre de Rochemont said, “We are pleased to announce that Mr. Viljanmaa will be joining Frontier NanoSystems in a business and operational capacity. He brings a proven ability to build companies with world class business cultures by combining his competitive drive with strong personal and professional ethics, and a broad intellectual bandwidth.” View the full press release.
July 19, 2014—The U.S. Patent and Trademark Office has issued multiple patents on fully integrated power management devices. U.S. Patent No. 8,749,054, “Semiconductor carrier Vertical FET Module”, protects proprietary claims to the monolithic integration of high-efficiency power management modules on semiconductor carriers to switch power at high-speed among co-located semiconductor die. U.S. Patent No. 8,779,489, “Power FET with Resonant Transistor Gate”, establishes proprietary claims to methods that switch arbitrarily large currents at arbitrarily high-speeds by embedding passive circuit elements within an elongated transistor gate.
May 15, 2014—Two newly issued U.S. patents consolidate Frontier NanoSystems’ proprietary claim to Big Nano across multiple material classes and in fully integrated microelectronic systems. U.S. Patent No. 8,715,839, ”Electrical Components and Methods of Manufacture”, establish broad claims to passive circuitry satisfying critical performance tolerances integrated within printed circuit boards, semiconductor packaging, and at the wafer scale. U.S. Patent No. 8,715,814 claims Big Nano in the form of a metal, superalloy, semiconductor, or ceramic as a composite layer for a free-standing body.
October 22, 2013—Frontier NanoSystems is awarded the first of a series of patent applications claiming high conversion efficiency (98+%) power management devices. U.S. Patent No. 8,552,708 establishes claims to embodiments and methods that minimize magnetic material losses in our proprietary circuit technology. Magnetic dielectric loss is the leading contribution to inadequate power conversion efficiencies in our competitors’ conventional product offerings.
January 15, 2013—Frontier NanoSystems has been issued two key patents to Big Nano embodiments and monolithic circuit integration. U.S. No. 8,354,294, awarded today, establishes claims to metal, super-alloy, and semiconductor Big Nano embodiments and the manufacturing process needed to make this unique state of matter. U.S. No. 8,350,657 B2, awarded last week, claims the integration of inductor coils that satisfy critical performance tolerances on the surface of silicon and other semiconductors, and the integration of tight tolerance passive components restricted to power management circuit modules.
September 15, 2011—Frontier NanoSystems is awarded patent claims in Japan (JP 4,843,611) on the use of Big Nano electroceramics in meta-material dielectrics and antenna modules.
October 4, 2007–Frontier NanoSystems’ GM/Founder presents a macroeconomic analysis at NanoTX’07 that predicts the wireless handset industry will become fiscally insolvent by 2009/2010 without systemic changes to the industry’s supply chain management that Big Nano will enable.
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